
TC4422EMF713
ActiveIC GATE DRVR LOW-SIDE 8DFN
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TC4422EMF713
ActiveIC GATE DRVR LOW-SIDE 8DFN
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Technical Specifications
Parameters and characteristics commom to parts in this series
Specification | TC4422EMF713 | TC4422 Series |
---|---|---|
- | - | |
Channel Type | Single | Single |
Current - Peak Output (Source, Sink) [custom] | 9 A | 9 - 10 A |
Current - Peak Output (Source, Sink) [custom] | 9 A | 9 - 10 A |
Driven Configuration | Low-Side | Low-Side |
Gate Type | - | MOSFET (N-Channel, P-Channel), IGBT |
Grade | - | Automotive |
Input Type | Non-Inverting | Non-Inverting |
Mounting Type | Surface Mount | Surface Mount, Through Hole |
Number of Drivers | 1 | 1 |
Operating Temperature [Max] | 150 °C | 125 - 150 °C |
Operating Temperature [Min] | -40 °C | -55 - 0 °C |
Package / Case | 8-VDFN Exposed Pad | 8-VDFN Exposed Pad, TO-220-5, 8-CDIP, 8-DIP, 8-SOIC |
Package / Case | - | 7.62 mm |
Package / Case | - | 0.3 in |
Package / Case | - | 3.9 - 5.3 mm |
Package / Case | - | 0.154 - 0.209 in |
Qualification | - | AEC-Q100 |
Rise / Fall Time (Typ) | - | 33 ns |
Rise / Fall Time (Typ) | - | 38 ns |
Rise / Fall Time (Typ) [custom] | 60 ns | 60 ns |
Rise / Fall Time (Typ) [custom] | 60 ns | 60 ns |
Supplier Device Package | 8-DFN-S (6x5) | 8-DFN-S (6x5), TO-220-5, 8-CERDIP, 8-PDIP, 8-SOIC, 8-SOIJ |
Voltage - Supply [Max] | 18 V | 18 V |
Voltage - Supply [Min] | 4.5 V | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Distributor | Package | Quantity | $ | |
---|---|---|---|---|
Digikey | Tape & Reel (TR) | 3300 | $ 1.96 | |
Microchip Direct | T/R | 1 | $ 2.61 | |
25 | $ 2.15 | |||
100 | $ 1.96 | |||
1000 | $ 1.90 | |||
5000 | $ 1.88 |
TC4422 Series
9 A MOSFET Gate Driver
Part | Package / Case | Supplier Device Package | Channel Type | Input Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Number of Drivers | Driven Configuration | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Package / Case [y] | Package / Case [x] | Gate Type | Qualification | Grade |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TC4422EMF | ||||||||||||||||||||||||
Microchip Technology TC4422AVMF713 | ||||||||||||||||||||||||
Microchip Technology TC4422EPA | ||||||||||||||||||||||||
Microchip Technology TC4422EMF713 | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Single | Non-Inverting | 60 ns | 60 ns | 18 V | 4.5 V | 9 A | 9 A | 1 | Low-Side | Surface Mount | 150 °C | -40 °C | |||||||||
Microchip Technology TC4422VMF | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Single | Non-Inverting | 60 ns | 60 ns | 18 V | 4.5 V | 9 A | 9 A | 1 | Low-Side | Surface Mount | 150 °C | -40 °C | |||||||||
Microchip Technology TC4422MJA | ||||||||||||||||||||||||
Microchip Technology TC4422AVOA | ||||||||||||||||||||||||
Microchip Technology TC4422CAT | TO-220-5 | TO-220-5 | Single | Non-Inverting | 60 ns | 60 ns | 18 V | 4.5 V | 9 A | 9 A | 1 | Low-Side | Through Hole | 150 °C | 0 °C | |||||||||
Microchip Technology TC4422MJA | 8-CDIP | 8-CERDIP | Single | Non-Inverting | 60 ns | 60 ns | 18 V | 4.5 V | 9 A | 9 A | 1 | Low-Side | Through Hole | 150 °C | -55 °C | 7.62 mm | 0.3 in | |||||||
Microchip Technology TC4422AVMF713 | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Single | Non-Inverting | 18 V | 4.5 V | 10 A | 10 A | 1 | Low-Side | Surface Mount | 150 °C | -40 °C | 33 ns | 38 ns |
Description
General part information
TC4422 Series
The TC4421A/TC4422A are improved versions of the earlier TC4421/TC4422 family of single-output MOSFET gate drivers. These devices are high-current buffer/drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). The TC4421A/TC4422A have matched output rise and fall times, as well as matched leading and falling-edge propagation delay times. The TC4421A/TC4422A devices also have very low cross-conduction current, reducing the overall power dissipation of the device.
These devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5 V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1 A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge.
The TC4421A/TC4422A inputs may be driven directly from either TTL or CMOS (3 V to 18 V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. With both surface-mount and pin-through-hole packages, in addition to a wide operating temperature range, the TC4421A/TC4422A family of 9 A MOSFET gate drivers fit into most any application where high gate/line capacitance drive is required.
Documents
Technical documentation and resources