IPA65R225C7XKSA1

LTB

Infineon Technologies

MOSFET N-CH 650V 7A TO220-FP

Search across all available documentation for this part.

LTB

Infineon Technologies

MOSFET N-CH 650V 7A TO220-FP

Technical Specifications

Parameters and characteristics for this part

Specification	IPA65R225C7XKSA1

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	996 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	29 W
Rds On (Max) @ Id, Vgs	225 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [x]	Mounting Type	Vgs (Max)
Infineon Technologies IPA65R225C7XKSA1	-55 °C	150 °C	7 A	996 pF	PG-TO220-FP	TO-220-3 Full Pack	29 W	225 mOhm	650 V	4 V	MOSFET (Metal Oxide)	10 V	N-Channel	20 nC	Through Hole	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 7A (Tc) 29W (Tc) Through Hole PG-TO220-FP

Technical documentation and resources

No documents available