BSB280N15NZ3GXUMA1
ObsoleteInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; DIRECTFET™ M PACKAGE; 28 MOHM;
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BSB280N15NZ3GXUMA1
ObsoleteInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; DIRECTFET™ M PACKAGE; 28 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSB280N15NZ3GXUMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A, 9 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 21 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 3-WDSON |
| Power Dissipation (Max) | 2.8 W, 57 W |
| Rds On (Max) @ Id, Vgs | 28 mOhm |
| Supplier Device Package | CanPAK M™, MG-WDSON-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
BSB280 Series
The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.