STW25NM60ND

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STMicroelectronics

MOSFET N-CH 600V 21A TO247-3

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STMicroelectronics

MOSFET N-CH 600V 21A TO247-3

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General part information

N-Channel 600 V 21A (Tc) 160W (Tc) Through Hole TO-247-3

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Parameters and characteristics commom to parts in this series

Specification	STW25NM60ND	STW25N Series

Current - Continuous Drain (Id) @ 25°C	21 A	21 - 22 A
Drain to Source Voltage (Vdss)	600 V	600 - 950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC	80 - 105 nC
Gate Charge (Qg) (Max) @ Vgs	-	84 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2400 pF	2400 - 3680 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Operating Temperature	-	-55 °C
Operating Temperature	-	150 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	-	400 W
Rds On (Max) @ Id, Vgs	160 mOhm	160 - 360 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 - 30 V
Vgs(th) (Max) @ Id	5 V	4 - 5 V

MOSFET N-CH 600V 21A TO247-3

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
STMicroelectronics STW25NM60N	10 V	4 V	2400 pF	TO-247-3	21 A	84 nC	N-Channel	Through Hole	600 V	MOSFET (Metal Oxide)	TO-247-3	160 mOhm	150 °C	25 V
STMicroelectronics STW25NM60ND	10 V	5 V	2400 pF	TO-247-3	21 A		N-Channel	Through Hole	600 V	MOSFET (Metal Oxide)	TO-247-3	160 mOhm	150 °C	25 V	80 nC
STMicroelectronics STW25N95K3	10 V	5 V	3680 pF	TO-247-3	22 A		N-Channel	Through Hole	950 V	MOSFET (Metal Oxide)	TO-247-3	360 mOhm		30 V	105 nC	400 W	-55 °C	150 °C