Specification	STW25NM60ND

Current - Continuous Drain (Id) (Tc)	21 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	80 nC, 80 nC
Input Capacitance (Ciss) (Max)	2400 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Power Dissipation (Max)	160 W
Rds On (Max)	160 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	5 V

STW25N Series

Part	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Package Name	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature	Current - Continuous Drain (Id) (Tc)	Technology	FET Type	Vgs (Max)	Vgs(th) (Max)	Rds On (Max)	Mounting Type	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)
STMicroelectronics STW25NM60N	84 nC	2400 pF	TO-247-3	600 V	10 V	TO-247-3	150 °C	21 A	MOSFET (Metal Oxide)	N-Channel	25 V	4 V	160 mOhm	Through Hole	160 W
STMicroelectronics STW25NM60ND	80 nC 80 nC	2400 pF	TO-247-3	600 V	10 V	TO-247-3	150 °C	21 A	MOSFET (Metal Oxide)	N-Channel	25 V	5 V	160 mOhm	Through Hole	160 W
STMicroelectronics STW25N95K3	105 nC	3680 pF	TO-247-3	950 V	10 V	TO-247-3		22 A	MOSFET (Metal Oxide)	N-Channel	30 V	5 V	360 mOhm	Through Hole	400 W	-55 °C	150 °C

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