IPN60R600P7SATMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; SOT-223 PACKAGE; 600 MOHM; PRICE/PERFORMANCE

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IPN60R600P7SATMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; SOT-223 PACKAGE; 600 MOHM; PRICE/PERFORMANCE

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Technical Specifications

Parameters and characteristics for this part

Specification	IPN60R600P7SATMA1

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Input Capacitance (Ciss) (Max) @ Vds	363 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	7 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	PG-SOT223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPN60R600 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package
Infineon Technologies IPN60R600P7SATMA1	10 V	150 °C	-40 °C	9 nC	7 W	600 V	20 V	N-Channel	6 A	Surface Mount	TO-261-4 TO-261AA	4 V	363 pF	600 mOhm	MOSFET (Metal Oxide)	PG-SOT223

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.17
		10	$ 0.73
		100	$ 0.48
		500	$ 0.38
		1000	$ 0.34
	Digi-Reel®	1	$ 1.17
		10	$ 0.73
		100	$ 0.48
		500	$ 0.38
		1000	$ 0.34
	Tape & Reel (TR)	3000	$ 0.30
		6000	$ 0.27
		9000	$ 0.26
		15000	$ 0.26
Newark	Each (Supplied on Full Reel)	3000	$ 0.41
		6000	$ 0.40
		12000	$ 0.39
		18000	$ 0.38

Description

General part information

IPN60R600 Series

CoolMOS™ P7superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makesCoolMOS™ P7 in SOT-223a perfect fit for its target applications. 700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC).

Documents

Technical documentation and resources