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IPF024N10NF2SATMA1 - IPF014N08NF2SATMA1

IPF024N10NF2SATMA1

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Infineon Technologies

STRONGIRFET™ 2 SINGLE N-CHANNEL POWER MOSFET 100 V IN D²PAK 7-PIN PACKAGE

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IPF024N10NF2SATMA1 - IPF014N08NF2SATMA1

IPF024N10NF2SATMA1

Active
Infineon Technologies

STRONGIRFET™ 2 SINGLE N-CHANNEL POWER MOSFET 100 V IN D²PAK 7-PIN PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPF024N10NF2SATMA1
Current - Continuous Drain (Id) @ 25°C227 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs154 nC
Input Capacitance (Ciss) (Max) @ Vds7300 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max) [Max]250 W
Rds On (Max) @ Id, Vgs2.4 mOhm
Supplier Device PackagePG-TO263-7-14
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.65
10$ 3.08
100$ 2.19
Digi-Reel® 1$ 4.65
10$ 3.08
100$ 2.19
Tape & Reel (TR) 800$ 1.72
NewarkEach (Supplied on Cut Tape) 1$ 5.37
10$ 4.11
25$ 3.80
50$ 3.49
100$ 3.19
250$ 2.95
500$ 2.71
1600$ 2.70

Description

General part information

IPF024N Series

Infineon'sStrongIRFET™ 2power MOSFET 100 V features low RDS(on)of 2.4 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Documents

Technical documentation and resources