BSC010NE2LSATMA1

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Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 1 MOHM;

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BSC010NE2LSATMA1

Active

Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 1 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC010NE2LSATMA1

Current - Continuous Drain (Id) @ 25°C	100 A, 39 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	4700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 96 W
Rds On (Max) @ Id, Vgs [Max]	1 mOhm
Supplier Device Package	PG-TDSON-8-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

BSC010 Series

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type
Infineon Technologies BSC010NE2LSATMA1	Surface Mount	64 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	2 V	39 A 100 A	PG-TDSON-8-7	4700 pF	1 mOhm	25 V	20 V	8-PowerTDFN	4.5 V 10 V	2.5 W 96 W	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.39
		10	$ 1.54
		100	$ 1.05
		500	$ 0.84
		1000	$ 0.77
		2000	$ 0.72
	Digi-Reel®	1	$ 2.39
		10	$ 1.54
		100	$ 1.05
		500	$ 0.84
		1000	$ 0.77
		2000	$ 0.72
	Tape & Reel (TR)	5000	$ 0.69
Newark	Each (Supplied on Full Reel)	5000	$ 0.82

Description

General part information

BSC010 Series

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Documents

Technical documentation and resources

No documents available