Specification	DS28E02Q-W01+3T

Access Time	2 µs
Memory Depth	256
Memory Format	EEPROM
Memory Interface (Type)	®
Memory Interface Wire Count	1
Memory Size	1 Kbit
Memory Type	Non-Volatile
Memory Width	4 bit
Mounting Type	Surface Mount
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-20 °C
Package / Case	6-WDFN Exposed Pad
Package Length	3 mm
Package Name	6-TDFN
Package Width	3 mm
Technology	EEPROM
Voltage - Supply (Maximum)	3.65 V
Voltage - Supply (Minimum)	1.75 V
Write Cycle Time - Page	25 ms
Write Cycle Time - Word	25 ms

DS28E02 Series

Part	Memory Interface Wire Count	Memory Interface (Type)	Package Name	Technology	Access Time	Package / Case	Operating Temperature (Max)	Operating Temperature (Min)	Memory Type	Memory Width	Memory Depth	Memory Size	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Memory Format	Mounting Type	Write Cycle Time - Page	Write Cycle Time - Word	Package Length	Package Width
Analog Devices Inc./Maxim Integrated DS28E02P-W10+6T	1	®	6-TSOC	EEPROM	2 µs	6-SMD J-Lead	85 °C	-20 °C	Non-Volatile	4 bit	256	1 Kbit	1.75 V	3.65 V	EEPROM	Surface Mount	25 ms	25 ms
Analog Devices Inc./Maxim Integrated DS28E02P-W10+9T	1	®	6-TSOC	EEPROM	2 µs	6-SMD J-Lead	85 °C	-20 °C	Non-Volatile	4 bit	256	1 Kbit	1.75 V	3.65 V	EEPROM	Surface Mount	25 ms	25 ms
Analog Devices Inc./Maxim Integrated DS28E02P-W10+4	1	®	6-TSOC	EEPROM	2 µs	6-SMD J-Lead	85 °C	-20 °C	Non-Volatile	4 bit	256	1 Kbit	1.75 V	3.65 V	EEPROM	Surface Mount	25 ms	25 ms
Analog Devices Inc./Maxim Integrated DS28E02Q-W01+2T	1	®	6-TDFN	EEPROM	2 µs	6-WDFN Exposed Pad	85 °C	-20 °C	Non-Volatile	4 bit	256	1 Kbit	1.75 V	3.65 V	EEPROM	Surface Mount	25 ms	25 ms	3 mm	3 mm
Analog Devices Inc./Maxim Integrated DS28E02P-W10+5	1	®	6-TSOC	EEPROM	2 µs	6-SMD J-Lead	85 °C	-20 °C	Non-Volatile	4 bit	256	1 Kbit	1.75 V	3.65 V	EEPROM	Surface Mount	25 ms	25 ms
Analog Devices Inc./Maxim Integrated DS28E02Q-W01+3T	1	®	6-TDFN	EEPROM	2 µs	6-WDFN Exposed Pad	85 °C	-20 °C	Non-Volatile	4 bit	256	1 Kbit	1.75 V	3.65 V	EEPROM	Surface Mount	25 ms	25 ms	3 mm	3 mm
Analog Devices Inc./Maxim Integrated DS28E02P-W13+1T	1	®	6-TSOC	EEPROM	2 µs	6-SMD J-Lead	85 °C	-20 °C	Non-Volatile	4 bit	256	1 Kbit	1.75 V	3.65 V	EEPROM	Surface Mount	25 ms	25 ms
Analog Devices Inc./Maxim Integrated DS28E02P-W10+2T	1	®	6-TSOC	EEPROM	2 µs	6-SMD J-Lead	85 °C	-20 °C	Non-Volatile	4 bit	256	1 Kbit	1.75 V	3.65 V	EEPROM	Surface Mount	25 ms	25 ms
Analog Devices Inc./Maxim Integrated DS28E02P-W10+1	1	®	6-TSOC	EEPROM	2 µs	6-SMD J-Lead	85 °C	-20 °C	Non-Volatile	4 bit	256	1 Kbit	1.75 V	3.65 V	EEPROM	Surface Mount	25 ms	25 ms
Analog Devices Inc./Maxim Integrated DS28E02P+	1	®	6-TSOC	EEPROM	2 µs	6-SMD J-Lead	85 °C	-20 °C	Non-Volatile	4 bit	256	1 Kbit	1.75 V	3.65 V	EEPROM	Surface Mount	25 ms	25 ms

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