IPC055N03L3X1SA1

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Infineon Technologies

OPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES

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IPC055N03L3X1SA1

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Infineon Technologies

OPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPC055N03L3X1SA1

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Mounting Type	Surface Mount
Package / Case	Die
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	Sawn on foil
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

IPC055N Series

Part	Mounting Type	FET Type	Package / Case	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IPC055N03L3X1SA1	Surface Mount	N-Channel	Die	2.2 V	Sawn on foil	30 V	MOSFET (Metal Oxide)	1 A	50 mOhm	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	25450	$ 0.56

Description

General part information

IPC055N Series

With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior as increased battery life.

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Technical documentation and resources