IPB093N04LGATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 40V 50A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 50A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB093N04LGATMA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	47 W
Rds On (Max) @ Id, Vgs	9.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)
Infineon Technologies IPB093N04LGATMA1	40 V	2 V	MOSFET (Metal Oxide)	9.3 mOhm	2100 pF	N-Channel	4.5 V 10 V	Surface Mount	50 A	47 W	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	28 nC	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 50A (Tc) 47W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources