Littelfuse Power Semi TO-220 3 H 3L image

IXFP12N50PM

Obsolete

LITTELFUSE

MOSFET N-CH 500V 6A TO220AB

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IXFP12N50PM

Obsolete

LITTELFUSE

MOSFET N-CH 500V 6A TO220AB

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXFP12 Series

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP12N50PM

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	29 nC
Input Capacitance (Ciss) (Max)	1830 pF, 1830 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220-3
Power Dissipation (Max)	50 W
Rds On (Max)	500 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5.5 V

IXFP12 Series

DiscMSFT NChUltraJnctX2Class TO-220AB/FP

Part	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Package Name	Gate Charge (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	FET Type
LITTELFUSE IXFP12N50PM	-55 °C	150 °C	Through Hole	6 A	TO-220-3	29 nC	5.5 V	1830 pF 1830 pF	10 V	TO-220-3	30 V	500 mOhm	500 V	MOSFET (Metal Oxide)	50 W	N-Channel
LITTELFUSE IXFP12N65X3
LITTELFUSE IXFP12N50P	-55 °C	150 °C	Through Hole	12 A	TO-220-3	29 nC	5.5 V	1830 pF 1830 pF	10 V	TO-220-3	30 V	500 mOhm	500 V	MOSFET (Metal Oxide)	200 W	N-Channel
LITTELFUSE IXFP12N65X2M	-55 °C	150 °C	Through Hole	12 A	TO-220 Isolated Tab	18.5 nC	5 V		10 V	Isolated Tab TO-220-3 Full Pack	30 V	310 mOhm	650 V	MOSFET (Metal Oxide)	40 W	N-Channel
LITTELFUSE IXFP12N65X2M	-55 °C	150 °C	Through Hole	12 A	TO-220 Isolated Tab	18.5 nC	5 V		10 V	Isolated Tab TO-220-3 Full Pack	30 V	310 mOhm	650 V	MOSFET (Metal Oxide)	40 W	N-Channel
LITTELFUSE IXFP12N65X2	-55 °C	150 °C	Through Hole	12 A	TO-220-3	18.5 nC	5 V		10 V	TO-220-3	30 V	310 mOhm	650 V	MOSFET (Metal Oxide)	180 W	N-Channel
LITTELFUSE IXFP12N65X2	-55 °C	150 °C	Through Hole	12 A	TO-220-3	18.5 nC	5 V		10 V	TO-220-3	30 V	310 mOhm	650 V	MOSFET (Metal Oxide)	180 W	N-Channel
LITTELFUSE IXFP12N65X3

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

UR_QQQX2_E153432_20180829

UR_QQQX2_E72873_20171208