MMIX1T550N055T2

Active

IXYS

TRANS MOSFET N-CH 55V 550A 21-PIN SMPD-X

Search across all available documentation for this part.

Active

IXYS

TRANS MOSFET N-CH 55V 550A 21-PIN SMPD-X

Technical Specifications

Parameters and characteristics for this part

Specification	MMIX1T550N055T2

Current - Continuous Drain (Id) @ 25°C	550 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	595 nC
Input Capacitance (Ciss) (Max) @ Vds	40000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	24-PowerSMD, 21 Leads
Power Dissipation (Max) [Max]	830 W
Rds On (Max) @ Id, Vgs	1.3 mOhm
Supplier Device Package	24-SMPD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C
IXYS MMIX1T550N055T2	-55 °C	175 ░C	24-PowerSMD 21 Leads	3.8 V	MOSFET (Metal Oxide)	24-SMPD	N-Channel	20 V	55 V	Surface Mount	10 V	40000 pF	1.3 mOhm	595 nC	830 W	550 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 550A (Tc) 830W (Tc) Surface Mount 24-SMPD

Technical documentation and resources

No documents available