CP647-MJ11015-WN

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Central Semiconductor Corp

TRANS PNP DARL 120V 30A DIE

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Central Semiconductor Corp

TRANS PNP DARL 120V 30A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	CP647-MJ11015-WN

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	Die
Supplier Device Package	Die
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic [Max]	4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]
Central Semiconductor Corp CP647-MJ11015-WN	Die	120 V	150 °C	-65 °C	PNP - Darlington	Die	Surface Mount	4 V	1 mA	200	30 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP - Darlington 120 V 30 A Surface Mount Die

Technical documentation and resources