
IS43LR32160C-6BLI-TR
ActiveISSI, Integrated Silicon Solution Inc
DRAM CHIP MOBILE DDR SDRAM 512M-BIT 16M X 32 1.8V 90-PIN TFBGA T/R

IS43LR32160C-6BLI-TR
ActiveISSI, Integrated Silicon Solution Inc
DRAM CHIP MOBILE DDR SDRAM 512M-BIT 16M X 32 1.8V 90-PIN TFBGA T/R
Description
General part information
IS43LR32160 Series
JEDEC standard 1.8V power supply
VDD = 1.8V, VDDQ = 1.8V
Four internal banks for concurrent operation
Technical Specifications
Parameters and characteristics for this part
| Specification | IS43LR32160C-6BLI-TR |
|---|---|
| Access Time | 5.5 ns |
| Clock Frequency | 166 MHz |
| Memory Depth | 16 M |
| Memory Format | DRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 512 Mb |
| Memory Type | Volatile |
| Memory Width | 32 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 90-TFBGA |
| Package Length | 8 mm |
| Package Name | 90-TFBGA |
| Package Width | 13 mm |
| Technology | SDRAM - Mobile LPDDR |
| Voltage - Supply (Maximum) | 1.95 V |
| Voltage - Supply (Minimum) | 1.7 V |
| Write Cycle Time - Page | 12 ns |
| Write Cycle Time - Word | 12 ns |
Pricing
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