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90BGA

IS43LR32160C-6BLI-TR

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ISSI, Integrated Silicon Solution Inc

DRAM CHIP MOBILE DDR SDRAM 512M-BIT 16M X 32 1.8V 90-PIN TFBGA T/R

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90BGA

IS43LR32160C-6BLI-TR

Active
ISSI, Integrated Silicon Solution Inc

DRAM CHIP MOBILE DDR SDRAM 512M-BIT 16M X 32 1.8V 90-PIN TFBGA T/R

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Description

General part information

IS43LR32160 Series

JEDEC standard 1.8V power supply

VDD = 1.8V, VDDQ = 1.8V

Four internal banks for concurrent operation

Technical Specifications

Parameters and characteristics for this part

SpecificationIS43LR32160C-6BLI-TR
Access Time5.5 ns
Clock Frequency166 MHz
Memory Depth16 M
Memory FormatDRAM
Memory Interface (Type)Parallel
Memory Size512 Mb
Memory TypeVolatile
Memory Width32 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case90-TFBGA
Package Length8 mm
Package Name90-TFBGA
Package Width13 mm
TechnologySDRAM - Mobile LPDDR
Voltage - Supply (Maximum)1.95 V
Voltage - Supply (Minimum)1.7 V
Write Cycle Time - Page12 ns
Write Cycle Time - Word12 ns

Pricing

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