1N3210R

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GeneSiC Semiconductor

DIODE GP REV 200V 15A DO203AB

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Active

GeneSiC Semiconductor

DIODE GP REV 200V 15A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	1N3210R

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Supplier Device Package	DO-203AB
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	15 A, 1.5 V

DIODE GP REV 200V 15A DO203AB

Part	Speed	Speed	Package / Case	Supplier Device Package	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Technology
GeneSiC Semiconductor 1N3210R	Standard Recovery >500ns	200 mA	DO-203AB, DO-5, Stud	DO-5	DO-203AB	Stud Mount	175 ░C	-65 C	200 V	1.5 V, 15 A	10 µA	15 A	Reverse Polarity, Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 15A Stud Mount DO-203AB (DO-5)

Technical documentation and resources