AUIRF3710ZSTRL

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Infineon Technologies

MOSFET N-CH 100V 59A D2PAK

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Infineon Technologies

MOSFET N-CH 100V 59A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF3710ZSTRL

Current - Continuous Drain (Id) @ 25°C	59 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	2900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Rds On (Max) @ Id, Vgs	18 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id
Infineon Technologies AUIRF3710ZSTRL	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	MOSFET (Metal Oxide)	59 A	10 V	100 V	2900 pF	N-Channel	120 nC	18 mOhm	20 V	4 V
Infineon Technologies AUIRF3710ZS	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	MOSFET (Metal Oxide)	59 A	10 V	100 V	2900 pF	N-Channel	120 nC	18 mOhm	20 V	4 V

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General part information

N-Channel 100 V 59A (Tc) 160W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources