STPSC806G-TR

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STMicroelectronics

DIODE SIL CARBIDE 600V 8A D2PAK

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STMicroelectronics

DIODE SIL CARBIDE 600V 8A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STPSC806G-TR

Capacitance @ Vr, F	450 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	D2PAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]
STMicroelectronics STPSC806D	450 pF	100 µA	Through Hole	1.7 V	No Recovery Time	8 A	-40 °C	175 ░C	SiC (Silicon Carbide) Schottky	0 ns	TO-220-2	TO-220AC	600 V
STMicroelectronics STPSC806G-TR	450 pF	100 µA	Surface Mount	1.7 V	No Recovery Time	8 A	-40 °C	175 ░C	SiC (Silicon Carbide) Schottky	0 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 8A Surface Mount D2PAK

Technical documentation and resources

No documents available