FMMTA92QTA

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	FMMTA92QTA

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	250 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	50 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	310 mW
Qualification	AEC-Q101
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

PNP, 300V, 0.2A, SOT23

Part	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Grade	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Qualification	Package / Case
Diodes Inc FMMTA92QTA	300 V	PNP	Surface Mount	40	-55 °C	150 °C	310 mW	Automotive	200 mA	250 nA	SOT-23-3	500 mV	50 MHz	AEC-Q101	SC-59 SOT-23-3 TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Technical documentation and resources