SCT3160KLGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 17 A, 1.2 KV, 0.16 OHM, TO-247
SCT3160KLGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 17 A, 1.2 KV, 0.16 OHM, TO-247
Description
General part information
SCT3160KL Series
SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3160KLGC11 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 17 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 42 nC |
| Input Capacitance (Ciss) (Max) | 398 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247N |
| Power Dissipation (Max) | 103 W |
| Rds On (Max) | 208 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -4 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 5.6 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Application Note EN
DC-DC Phase-Shift Buck Converter: Reference Circuit
How to Suppress the Parallel Drive Oscillation in SiC Modules
Design Method for Comparator-less Miller Clamp Circuits
Gate-source voltage behaviour in a bridge configuration
Anti-Whisker formation
Part Explanation
How to Use LTspice® Models
What Is Thermal Design
SiC MOSFET Layout Design Considerations
ESD Data
Condition of Soldering
Two-Resistor Model for Thermal Simulation
How to Use PSIM Models
Inner Structure
Thermal Resistance Measurement Method for SiC MOSFET
Application Note for SiC Power Devices and Modules
Taping Information
Precautions during gate-source voltage measurement for SiC MOSFET
4 Steps for Successful Thermal Designing of Power Devices
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Measurement Method and Usage of Thermal Resistance RthJC
How to measure the oscillation occurs between parallel-connected devices
Method for Monitoring Switching Waveform
Notes for Temperature Measurement Using Thermocouples
Calculation of Power Dissipation in Switching Circuit
Package Dimensions
Judgment Criteria of Thermal Evaluation
Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs
Generation Mechanism of Voltage Surge on Commutation Side (Basic)
PCB Layout Thermal Design Guide
θ<sub>JA</sub> and Ψ<sub>JT</sub>
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Oscillation countermeasures for MOSFETs in parallel
Calculating Power Loss from Measured Waveforms
Precautions for Thermal Resistance of Insulation Sheet
Notes for Calculating Power Consumption:Static Operation
Importance of Probe Calibration When Measuring Power: Deskew
How to Use PLECS Models
Basics of Thermal Resistance and Heat Dissipation
Solving the challenges of driving SiC MOSFETs with new packaging developments
Basics and Design Guidelines for Gate Drive Circuits
What is a Thermal Model? (SiC Power Device)
DC-DC LLC Buck Converter: Reference Circuit
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
About Export Administration Regulations (EAR)
Impedance Characteristics of Bypass Capacitor
Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
About Flammability of Materials
Reliability Test Result
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Types and Features of Transistors
How to Create Symbols for PSpice Models
Best practices for the connection of Driver Source/Emitter terminals in discrete devices
The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Compliance of the ELV directive
How to Use Thermal Models
800V Three-Phase Output LLC DC/DC Resonant Converter
Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET
Explanation for Marking
Gate-Source Voltage Surge Suppression Methods
Precautions When Measuring the Rear of the Package with a Thermocouple
5kW High-Efficiency Fan-less Inverter
Snubber circuit design methods for SiC MOSFET
How to Use LTspice® Models: Tips for Improving Convergence