BYT230PIV-1000

Obsolete

STMicroelectronics

DIODE MODULE GP 1000V 30A ISOTOP

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Obsolete

STMicroelectronics

DIODE MODULE GP 1000V 30A ISOTOP

Technical Specifications

Parameters and characteristics for this part

Specification	BYT230PIV-1000

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction	150 °C
Package / Case	ISOTOP
Reverse Recovery Time (trr)	165 ns
Speed	200 mA, 500 ns
Supplier Device Package	ISOTOP®
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.9 V

Part	Diode Configuration	Operating Temperature - Junction	Mounting Type	Current - Average Rectified (Io) (per Diode)	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)
STMicroelectronics BYT230PIV-400	2 Independent	150 °C	Chassis Mount	30 A	ISOTOP	Standard	400 V	200 mA 500 ns	ISOTOP®	1.5 V	35 µA
STMicroelectronics BYT230PIV-1000	2 Independent	150 °C	Chassis Mount	30 A	ISOTOP	Standard	1000 V	200 mA 500 ns	ISOTOP®	1.9 V	100 µA	165 ns
STMicroelectronics BYT230Y-400	1 Pair Common Cathode	150 °C	Through Hole	30 A	TO-247-3	Standard	400 V	200 mA 500 ns	MAX247™	1.5 V	35 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 1000 V 30A Chassis Mount ISOTOP

Technical documentation and resources