AOTF4N60L

Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CHANNEL 600V 4A TO220F

Search across all available documentation for this part.

Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CHANNEL 600V 4A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF4N60L

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	615 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs [Max]	2.2 Ohm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Alpha & Omega Semiconductor Inc. AOTF4N60L	600 V	TO-220F	MOSFET (Metal Oxide)	2.2 Ohm	615 pF	18 nC	30 V	10 V	-55 °C	150 °C	Through Hole	N-Channel	TO-220-3 Full Pack	4.5 V	4 A	35 W
Alpha & Omega Semiconductor Inc. AOTF4S60	600 V	TO-220F	MOSFET (Metal Oxide)		263 pF		30 V	10 V	-55 °C	150 °C	Through Hole	N-Channel	TO-220-3 Full Pack	4.1 V	4 A		900 mOhm	6 nC	31 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 4A (Tc) 35W (Tc) Through Hole TO-220F

Technical documentation and resources