SIGC25T60UNX7SA2
ObsoleteInfineon Technologies
IGBT 3 CHIP 600V WAFER
Deep-Dive with AI
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SIGC25T60UNX7SA2
ObsoleteInfineon Technologies
IGBT 3 CHIP 600V WAFER
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SIGC25T60UNX7SA2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 30 A |
| Current - Collector Pulsed (Icm) | 90 A |
| IGBT Type | NPT |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | Die |
| Supplier Device Package | Die |
| Td (on/off) @ 25°C | 16 ns |
| Td (on/off) @ 25°C | 122 ns |
| Test Condition | 1.8 Ohm, 30 A, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 3.15 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SIGC25 Series
IGBT NPT 600 V 30 A Surface Mount Die
Documents
Technical documentation and resources
No documents available