Specification	PSMN7R8-120ESQ

Current - Continuous Drain (Id) (Tc)	70 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	167 nC, 167 nC
Input Capacitance (Ciss) (Max)	9473 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	I2PAK
Power Dissipation (Max)	349 W
Rds On (Max)	7.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

PSMN7R8 Series

Part	Gate Charge (Max)	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	FET Type	Package Name	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)
Nexperia USA Inc. PSMN7R8-120PSQ	167 nC 167 nC	Through Hole	349 W	4 V	MOSFET (Metal Oxide)	-55 °C	175 °C	120 V	9473 pF	70 A	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	I2PAK	20 V	10 V	7.9 mOhm
Nexperia USA Inc. PSMN7R8-120ESQ	167 nC 167 nC	Through Hole	349 W	4 V	MOSFET (Metal Oxide)	-55 °C	175 °C	120 V	9473 pF	70 A	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	I2PAK	20 V	10 V	7.9 mOhm

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