GP3D030A120U

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SemiQ

DIODE ARR SIC 1200V 15A TO247-3

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SemiQ

DIODE ARR SIC 1200V 15A TO247-3

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General part information

Diode Array 1 Pair Common Cathode 1200 V 15A Through Hole TO-247-3

Technical documentation and resources

Parameters and characteristics commom to parts in this series

Specification	GP3D030A120U	GP3D030 Series

Capacitance @ Vr, F	-	1247 pF
Current - Average Rectified (Io)	-	30 A
Current - Average Rectified (Io) (per Diode)	15 A	15 A
Current - Reverse Leakage @ Vr	30 µA	30 - 75 µA
Diode Configuration	1 Pair Common Cathode	1 Pair Common Cathode
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-55 C	-55 C
Package / Case	TO-247-3	TO-247-3, TO-247-2
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	TO-247-3	TO-247-3, TO-247-2
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV	1.2 - 650 kV
Voltage - Forward (Vf) (Max) @ If	1.6 V	1.6 - 1.65 V

DIODE ARR SIC 1200V 15A TO247-3

Part	Diode Configuration	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed	Voltage - Forward (Vf) (Max) @ If	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Technology	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Capacitance @ Vr, F
SemiQ GP3D030A120U	1 Pair Common Cathode	30 µA	175 ░C	-55 C	Through Hole	No Recovery Time	1.6 V	TO-247-3	1.2 kV	TO-247-3	15 A	SiC (Silicon Carbide) Schottky	0 ns
SemiQ GP3D030A065B		75 µA	175 ░C	-55 C	Through Hole	No Recovery Time	1.65 V	TO-247-2	650 V	TO-247-2		SiC (Silicon Carbide) Schottky	0 ns	30 A	1247 pF