MSC010SDA170B
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.7 KV, 10 A, 84 NC, TO-247
MSC010SDA170B
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.7 KV, 10 A, 84 NC, TO-247
Description
General part information
MSC010 Series
MSC010SDA170 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.
Technical Specifications
Parameters and characteristics for this part
| Specification | MSC010SDA170B |
|---|---|
| Capacitance | 820 pF |
| Current - Average Rectified (Io) | 31 A |
| Current - Reverse Leakage | 200 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-247-3, TO-247-2 |
| Package Name | TO-247-3, TO-247 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) | 1.8 V |
Pricing
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CAD
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