MSC010SDA120 Series

1200V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs)

Catalog

1200V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs)

Part	Reverse Recovery Time (trr)	Package Name	Package / Case	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max)	Mounting Type	Voltage - DC Reverse (Vr) (Max)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current
Microchip Technology MSC010SDA120D/S
Microchip Technology MSC010SDA120K	0 ns	TO-220-2	TO-220-2	SiC (Silicon Carbide) Schottky	10 A	1.5 V	Through Hole	1200 V	500 mA	No Recovery Time	500 mA 500 mA

Catalog

1200V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs)

Description

MSC010SDA120 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.