IXTH150N17T

Obsolete

IXYS

MOSFET N-CH 175V 150A TO247

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Obsolete

IXYS

MOSFET N-CH 175V 150A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH150N17T

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	175 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	9800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	830 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max) [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	FET Type
IXYS IXTH150N17T	12 mOhm	TO-247-3	150 A	175 V	9800 pF	-55 °C	175 ░C	155 nC	30 V	830 W	TO-247 (IXTH)	10 V	Through Hole	MOSFET (Metal Oxide)	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 175 V 150A (Tc) 830W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources

No documents available