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ZXMP2120E5TA - Package Image for SOT25

ZXMP2120E5TA

Obsolete
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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ZXMP2120E5TA - Package Image for SOT25

ZXMP2120E5TA

Obsolete
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationZXMP2120E5TA
Current - Continuous Drain (Id) @ 25°C122 mA
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds100 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-74A, SOT-753
Power Dissipation (Max)750 mW
Rds On (Max) @ Id, Vgs28 Ohm
Supplier Device PackageSOT-25
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

ZXMP2120E5 Series

This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.