
ZXMP2120E5TA
ObsoleteDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Deep-Dive with AI
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ZXMP2120E5TA
ObsoleteDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXMP2120E5TA |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 122 mA |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-74A, SOT-753 |
| Power Dissipation (Max) | 750 mW |
| Rds On (Max) @ Id, Vgs | 28 Ohm |
| Supplier Device Package | SOT-25 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
ZXMP2120E5 Series
This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.
Documents
Technical documentation and resources