IRF200P222

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; TO-247 PACKAGE; 6.6 MOHM;

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DocumentsIR Part Numbering System Datasheet

IRF200P222

Active

Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; TO-247 PACKAGE; 6.6 MOHM;

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DocumentsIR Part Numbering System Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF200P222

Current - Continuous Drain (Id) @ 25°C	182 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	203 nC
Input Capacitance (Ciss) (Max) @ Vds	9820 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	556 W
Rds On (Max) @ Id, Vgs	6.6 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF200 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package
Infineon Technologies IRF200S234	-55 °C	175 ░C	162 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	16.9 mOhm	200 V	417 W	90 A	5 V	20 V	10 V	MOSFET (Metal Oxide)	Surface Mount	N-Channel	6484 pF
Infineon Technologies IRF200P222	-55 °C	175 ░C	203 nC	TO-247-3		200 V	556 W	182 A	4 V	20 V	10 V	MOSFET (Metal Oxide)	Through Hole	N-Channel	9820 pF	6.6 mOhm	TO-247AC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.26
		10	$ 7.08
		100	$ 5.28
		500	$ 4.91

Description

General part information

IRF200 Series

Improved Gate, Avalanche and Dynamic dv/dt RuggednessFully Characterized Capacitance and Avalanche SOAEnhanced body diode dv/dt and di/dt CapabilityLead-Free, RoHS Compliant

Documents

Technical documentation and resources