Specification	SI3473CDV-T1-GE3

Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	65 nC
Input Capacitance (Ciss) (Max)	2010 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	2 W, 4.2 W
Rds On (Max)	22 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SI3473 Series

Part	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Gate Charge (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Package / Case	Power Dissipation (Max)	Mounting Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Vgs (Max)
Vishay Dale SI3473DDV-T1-GE3	1975 pF 1975 pF	12 V	6-TSOP	4.5 V	1.8 V	1 V	57 nC	P-Channel	8 A	SOT-23-6 Thin TSOT-23-6	3.6 W	Surface Mount	17.8 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	8 V
Vishay Dale SI3473CDV-T1-GE3	2010 pF	12 V	6-TSOP	4.5 V	1.8 V	1 V	65 nC	P-Channel	8 A	SOT-23-6 Thin TSOT-23-6	2 W 4.2 W	Surface Mount	22 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	8 V

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