JAN2N7370

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Microchip Technology

DARLINGTON NPN SILICON POWER 100V, 12A

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JAN2N7370

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Microchip Technology

DARLINGTON NPN SILICON POWER 100V, 12A

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Description Specifications Series Pricing CAD Documents

Description

General part information

JAN2N7370-Darlington Series

This specification covers the performance requirements for NPN silicon, high power Darlington, 2N7370 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/624.

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N7370

Current - Collector (Ic) (Max)	12 A
Current - Collector Cutoff (Max)	1 mA
DC Current Gain (hFE) (Min)	1000
Grade	Military
Mounting Type	Through Hole
Operating Temperature (Max)	200 °C
Operating Temperature (Min)	-65 °C
Package / Case	TO-254AA (Straight Leads), TO-254-3
Package Name	TO-254AA
Power - Max	100 VA
Qualification	MIL-PRF-19500, 624
Transistor Type	NPN, Darlington
Vce Saturation (Max)	3 V
Voltage - Collector Emitter Breakdown (Max)	100 V

JAN2N7370-Darlington Series

Darlington NPN Silicon Power 100V, 12A

Part	Qualification	Power - Max	Grade	Vce Saturation (Max)	Package Name	Transistor Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Collector (Ic) (Max)	DC Current Gain (hFE) (Min)	Package / Case	Current - Collector Cutoff (Max)
Microchip Technology JAN2N7370	624 MIL-PRF-19500	100 VA	Military	3 V	TO-254AA	Darlington NPN	Through Hole	100 V	-65 °C	200 °C	12 A	1000	TO-254-3 TO-254AA (Straight Leads)	1 mA

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

2N7370