FZT953TA

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 5A I(C), 100V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN,

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 5A I(C), 100V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN,

Technical Specifications

Parameters and characteristics for this part

Specification	FZT953TA

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	120 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	3 W
Supplier Device Package	SOT-223-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	460 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Power - Max [Max]	Transistor Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Frequency - Transition	Current - Collector (Ic) (Max)	Vce Saturation (Max) @ Ib, Ic
Diodes Inc FZT953TC	3 W	PNP	Surface Mount	-55 °C	150 °C	50 nA	100 V	SOT-223-3	100	TO-261-4 TO-261AA	120 MHz	5 A	460 mV
Diodes Inc FZT953TA	3 W	PNP	Surface Mount	-55 °C	150 °C	50 nA	100 V	SOT-223-3	100	TO-261-4 TO-261AA	120 MHz	5 A	460 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

5 Amps continuous current , up to 15 Amps peak current

Very low saturation voltages

Excellent gain characteristics specified up to 10 Amps

Technical documentation and resources