IXFV26N60P

Obsolete

IXYS

MOSFET N-CH 600V 26A PLUS220

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Obsolete

IXYS

MOSFET N-CH 600V 26A PLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFV26N60P

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3, Short Tab
Power Dissipation (Max)	460 W
Rds On (Max) @ Id, Vgs [Max]	270 mOhm
Supplier Device Package	PLUS220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology
IXYS IXFV26N60P	460 W	5 V	72 nC	270 mOhm	10 V	Through Hole	N-Channel	PLUS220	600 V	26 A	TO-220-3 Short Tab	-55 °C	150 °C	30 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 26A (Tc) 460W (Tc) Through Hole PLUS220

Technical documentation and resources

No documents available