TP5322K1-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -220V, 12 OHM
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TP5322K1-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -220V, 12 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TP5322K1-G | TP5322 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | - | 120 mA |
| Drain to Source Voltage (Vdss) | - | 220 V |
| Drive Voltage (Max Rds On, Min Rds On) | - | 4.5 - 10 V |
| FET Type | - | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - | 110 pF |
| Mounting Type | - | Surface Mount |
| null | - | |
| Operating Temperature | - | -55 °C |
| Operating Temperature | - | 150 °C |
| Package / Case | - | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | - | 360 mW |
| Rds On (Max) @ Id, Vgs | - | 12 Ohm |
| Supplier Device Package | - | TO-236AB (SOT23) |
| Technology | - | MOSFET (Metal Oxide) |
| Vgs (Max) | - | 20 V |
| Vgs(th) (Max) @ Id | - | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.75 | |
| 25 | $ 0.61 | |||
| 100 | $ 0.56 | |||
| Digi-Reel® | 1 | $ 0.75 | ||
| 25 | $ 0.61 | |||
| 100 | $ 0.56 | |||
| Tape & Reel (TR) | 3000 | $ 0.56 | ||
| Microchip Direct | T/R | 1 | $ 0.75 | |
| 25 | $ 0.61 | |||
| 100 | $ 0.56 | |||
| 1000 | $ 0.48 | |||
| 5000 | $ 0.43 | |||
| 10000 | $ 0.41 | |||
TP5322 Series
MOSFET, P-Channel Enhancement-Mode, -220V, 12 Ohm
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Package / Case | Supplier Device Package | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TP5322K1-G | |||||||||||||||
Microchip Technology TP5322K1-G | MOSFET (Metal Oxide) | 120 mA | 220 V | 20 V | 360 mW | 4.5 V, 10 V | 2.4 V | -55 °C | 150 °C | 12 Ohm | 110 pF | Surface Mount | SC-59, SOT-23-3, TO-236-3 | TO-236AB (SOT23) | P-Channel |
Description
General part information
TP5322 Series
TP5322 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources