BUJ302AX,127

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WeEn Semiconductors

TRANS NPN 400V 4A TO220F

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WeEn Semiconductors

TRANS NPN 400V 4A TO220F

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General part information

Bipolar (BJT) Transistor NPN 400 V 4 A 26 W Through Hole TO-220F

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Specification	BUJ302AX,127	BUJ302 Series

Current - Collector (Ic) (Max) [Max]	4 A	4 A
Current - Collector Cutoff (Max) [Max]	250 µA	250 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25	25
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature	150 °C	150 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab	TO-220-3 Full Pack, Isolated Tab, TO-220-3, SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	26 W	26 - 80 W
Supplier Device Package	TO-220F	TO-220F, TO-220AB, DPAK
Transistor Type	NPN	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V	1.5 V
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Transistor Type	Mounting Type	Package / Case	Operating Temperature	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
WeEn Semiconductors BUJ302AX,127	400 V	25	TO-220F	NPN	Through Hole	TO-220-3 Full Pack, Isolated Tab	150 °C	26 W	250 µA	4 A	1.5 V
WeEn Semiconductors BUJ302A,127	400 V	25	TO-220AB	NPN	Through Hole	TO-220-3	150 °C	80 W	250 mA	4 A	1.5 V
WeEn Semiconductors BUJ302AD,118	400 V	25	DPAK	NPN	Surface Mount	DPAK (2 Leads + Tab), SC-63, TO-252-3	150 °C	80 W	250 mA	4 A	1.5 V