SD5000N PDIP 16L ROHS

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Linear Integrated Systems, Inc.

MOSFET 4N-CH 20V 0.05A 16DIP

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Linear Integrated Systems, Inc.

MOSFET 4N-CH 20V 0.05A 16DIP

Technical Specifications

Parameters and characteristics for this part

Specification	SD5000N PDIP 16L ROHS

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	50 mA
Drain to Source Voltage (Vdss)	20 V
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.3 in
Package / Case	16-DIP
Package / Case	7.62 mm
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs [Max]	70 Ohm
Supplier Device Package	16-DIP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

MOSFET 4N-CH 20V 0.05A 16DIP

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Technology	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Linear Integrated Systems, Inc. SD5000N PDIP 16L ROHS	20 V	16-DIP	0.3 in	16-DIP	7.62 mm	70 Ohm	4 N-Channel	-55 °C	150 °C	500 mW	MOSFET (Metal Oxide)	Through Hole	1.5 V	50 mA

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General part information

Mosfet Array 20V 50mA (Ta) 500mW (Ta) Through Hole 16-DIP

Technical documentation and resources