IXTF200N10T

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IXYS

TRANSISTOR: N-MOSFET; UNIPOLAR; 100V; 90A; 156W; 76NS

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Active

IXYS

TRANSISTOR: N-MOSFET; UNIPOLAR; 100V; 90A; 156W; 76NS

Technical Specifications

Parameters and characteristics for this part

Specification	IXTF200N10T

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	152 nC
Input Capacitance (Ciss) (Max) @ Vds	9400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	i4-Pac™-5
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
IXYS IXTF200N10T	90 A	9400 pF	30 V	10 V	-55 °C	175 ░C	i4-Pac™-5	ISOPLUS i4-PAC™	100 V	Through Hole	152 nC	MOSFET (Metal Oxide)	156 W	N-Channel	4.5 V	7 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 90A (Tc) 156W (Tc) Through Hole ISOPLUS i4-PAC™

Technical documentation and resources

No documents available