IRF7410TRPBF

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Infineon Technologies

MOSFET, P-CH, 12V, 16A, SOIC ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, P-CH, 12V, 16A, SOIC ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7410TRPBF

Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	91 nC
Input Capacitance (Ciss) (Max) @ Vds	8676 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Drain to Source Voltage (Vdss)
Infineon Technologies IRF7410TRPBF	91 nC	MOSFET (Metal Oxide)	8676 pF	900 mV	P-Channel	-55 °C	150 °C	2.5 W	8-SO	8 V	1.8 V 4.5 V	7 mOhm	8-SOIC	3.9 mm	0.154 in	Surface Mount	12 V

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