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IQD020N10NM5CGATMA1 - 9-PowerTDFN

IQD020N10NM5CGATMA1

Active
Infineon Technologies

100V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH INDUSTRY-LEADING RDS(ON).

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IQD020N10NM5CGATMA1 - 9-PowerTDFN

IQD020N10NM5CGATMA1

Active
Infineon Technologies

100V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH INDUSTRY-LEADING RDS(ON).

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIQD020N10NM5CGATMA1
Current - Continuous Drain (Id) @ 25°C273 A, 26 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]134 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]9500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case9-PowerTDFN
Power Dissipation (Max)3 W, 333 W
Rds On (Max) @ Id, Vgs2.05 mOhm
Supplier Device PackagePG-TTFN-9-U02
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.47
10$ 4.02
25$ 3.80
100$ 3.29
250$ 3.12
500$ 2.80
1000$ 2.36
2500$ 2.25
Digi-Reel® 1$ 4.47
10$ 4.02
25$ 3.80
100$ 3.29
250$ 3.12
500$ 2.80
1000$ 2.36
2500$ 2.25
Tape & Reel (TR) 5000$ 2.16
NewarkEach (Supplied on Cut Tape) 1$ 4.28
10$ 3.24
25$ 2.98
50$ 2.84
100$ 2.69
250$ 2.56
500$ 2.48
1000$ 2.41

Description

General part information

IQD020 Series

The power MOSFET IQD020N10NM5CG 100 V normal-level comes in a PQFN 5x6 mm2Source-Downpackage. The part offers the industry’s lowest RDS(on)of 2.0 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications likeSMPS, battery-powered applications,battery management, andlow-voltage drives.

Documents

Technical documentation and resources