IPT60R040S7XTMA1
ActiveINFINEON’S 600V COOLMOS™ S7 SUPERJUNCTION POWER MOSFET IPT60R040S7 FOR LOW SWITCHING FREQUENCY APPLICATIONS IN PB-FREE TO-LEADLESS PACKAGE
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IPT60R040S7XTMA1
ActiveINFINEON’S 600V COOLMOS™ S7 SUPERJUNCTION POWER MOSFET IPT60R040S7 FOR LOW SWITCHING FREQUENCY APPLICATIONS IN PB-FREE TO-LEADLESS PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPT60R040S7XTMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12 V, 12 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 83 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3127 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerSFN |
| Power Dissipation (Max) | 245 W |
| Rds On (Max) @ Id, Vgs | 40 mOhm |
| Supplier Device Package | PG-HSOF-8-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPT60R040 Series
Infineon’s 600V CoolMOS™ S7 Superjunction MOSFET (IPT60R040S7) in TO-Leadless (Pb-free) package features a design optimized for low conduction performance. The IPT60R040S7 boasts the best RDS(on)x price for low frequency switching applications, like active bridge rectification, inverter stages, in-rush relays, PLCs, HV DC lines, powersolid state relay(SSR) and solid state circuit breakers (SSCB). This 600V CoolMOS™ S7 SJ MOSFET comes with enhanced energy efficiency and lower BOM expenses.
Documents
Technical documentation and resources