MDA950-12N1W

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IXYS

DIODE MODULE GP 1.2KV 950A

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IXYS

DIODE MODULE GP 1.2KV 950A

Technical Specifications

Parameters and characteristics for this part

Specification	MDA950-12N1W

Current - Average Rectified (Io) (per Diode)	950 A
Current - Reverse Leakage @ Vr	50 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Module
Reverse Recovery Time (trr)	18 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Module
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	880 mV

Part	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Mounting Type	Diode Configuration	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology
IXYS MDA950-12N1W	Module	150 °C	-40 °C	Standard Recovery >500ns	200 mA	Module	50 mA	880 mV	950 A	Chassis Mount	1 Pair Common Anode	18 µs	1.2 kV	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Anode 1200 V 950A Chassis Mount Module

Technical documentation and resources

No documents available