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TK60S10N1L,LXHQ

TK60S10N1L,LXHQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 100 V, 60 A, 0.00611 Ω@10V, DPAK+

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TK60S10N1L,LXHQ

TK60S10N1L,LXHQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 100 V, 60 A, 0.00611 Ω@10V, DPAK+

Find alt

Description

General part information

TK60S10N1L Series

12V - 300V MOSFETs, N-ch MOSFET, 100 V, 60 A, 0.00611 Ω@10V, DPAK+

Technical Specifications

Parameters and characteristics for this part

SpecificationTK60S10N1L,LXHQ
Current - Continuous Drain (Id) (Ta)60 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)60 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)4320 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPAK+
Power Dissipation (Max)180 W
QualificationAEC-Q101
Rds On (Max)6.11 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TK60S10N1L,LXHQ | Datasheet
Datasheet
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
Maximum Ratings: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Motor Control (Vacuum Cleaners)
TK60S10N1L Data sheet/Japanese
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Derating of the MOSFET Safe Operating Area
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Resonant Circuits and Soft Switching
MOSFET SPICE model grade
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
MOSFET Self-Turn-On Phenomenon
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
RC Snubbers for Step-Down Converters
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Structures and Characteristics: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Electrical Characteristics: Power MOSFET Application Notes
Simplified CFD Model Application Note
Avalanche energy calculation
Calculating the Temperature of Discrete Semiconductor Devices