TQM110NB04CR RLG

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Taiwan Semiconductor Corporation

40V 12A 23W 7.2MΩ@10V,12A 1.8V 1 N-CHANNEL PDFNU-8(5X6) MOSFETS ROHS

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Taiwan Semiconductor Corporation

40V 12A 23W 7.2MΩ@10V,12A 1.8V 1 N-CHANNEL PDFNU-8(5X6) MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	TQM110NB04CR RLG

Current - Continuous Drain (Id) @ 25°C	12 A, 54 A
Drain to Source Voltage (Vdss)	40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1352 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.1 W, 68 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	8-PDFNU (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Grade	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type
Taiwan Semiconductor Corporation TQM110NB04CR RLG	12 A 54 A	3.8 V	20 V	8-PDFNU (5x6)	8-PowerTDFN	Surface Mount Wettable Flank	1352 pF	-55 °C	175 ░C	MOSFET (Metal Oxide)	11 mOhm	3.1 W 68 W	Automotive	AEC-Q101	25 nC	40 V	N-Channel

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General part information

N-Channel 40 V 12A (Ta), 54A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount, Wettable Flank 8-PDFNU (5x6)

Technical documentation and resources