IXTP3N110

Obsolete

IXYS

MOSFET N-CH 1100V 3A TO220AB

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 1100V 3A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP3N110

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	1100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Package / Case	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
IXYS IXTP3N50P	2 Ohm	MOSFET (Metal Oxide)	TO-220-3	TO-220-3	70 W	-55 °C	150 °C	500 V	9.3 nC	3.6 A	409 pF	30 V	10 V	Through Hole	5.5 V	N-Channel
IXYS IXTP3N110	4 Ohm	MOSFET (Metal Oxide)	TO-220-3	TO-220-3	150 W	-55 °C	150 °C	1100 V	42 nC	3 A		20 V	10 V	Through Hole	5 V	N-Channel	1350 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1100 V 3A (Tc) 150W (Tc) Through Hole TO-220-3

Technical documentation and resources