IXTK90N15

Obsolete

IXYS

MOSFET N-CH 150V 90A TO264

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Obsolete

IXYS

MOSFET N-CH 150V 90A TO264

Technical Specifications

Parameters and characteristics for this part

Specification	IXTK90N15

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	240 nC
Input Capacitance (Ciss) (Max) @ Vds	6400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	390 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-264 (IXTK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology
IXYS IXTK90N15	16 mOhm	TO-264-3 TO-264AA	240 nC	-55 °C	150 °C	Through Hole	150 V	TO-264 (IXTK)	20 V	6400 pF	4 V	90 A	390 W	N-Channel	10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 90A (Tc) 390W (Tc) Through Hole TO-264 (IXTK)

Technical documentation and resources

No documents available