Specification	UPA2765T1A-E2-AY

Current - Continuous Drain (Id) (Ta)	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	152 nC
Input Capacitance (Ciss) (Max)	6550 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Package Length	5 mm
Package Name	8-HVSON
Package Width	5.4 mm
Power Dissipation (Max)	1.5 W, 83 W
Rds On (Max)	2.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

UPA2765T1A Series

Nch Single Power Mosfet 30V 100A 1.3Mohm 8Pin HVSON (6051)

Part	Current - Continuous Drain (Id) (Ta)	Mounting Type	Input Capacitance (Ciss) (Max)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Vgs (Max)	Power Dissipation (Max)	Package / Case	Package Name	Package Length	Package Width	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Operating Temperature	Technology
Renesas Electronics Corporation UPA2765T1A-E2-AY	100 A	Surface Mount	6550 pF	N-Channel	10 V	4.5 V	2.9 mOhm	20 V	1.5 W 83 W	8-PowerVDFN	8-HVSON	5 mm	5.4 mm	30 V	152 nC	150 °C	MOSFET (Metal Oxide)

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