BCP54H6327XTSA1

Infineon Technologies

TRANS NPN 45V 1A SOT223-4

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Infineon Technologies

TRANS NPN 45V 1A SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	BCP54H6327XTSA1

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	PG-SOT223-4-10
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

Part	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Package / Case	Mounting Type	Transistor Type
Infineon Technologies BCP54H6327XTSA1	1 A	100 MHz	45 V	150 °C	40	2 W	100 nA	500 mV	PG-SOT223-4-10	TO-261-4 TO-261AA	Surface Mount	NPN
Infineon Technologies BCP54E6327HTSA1	1 A	100 MHz	45 V	150 °C	40	2 W	100 nA	500 mV	PG-SOT223-4	TO-261-4 TO-261AA	Surface Mount	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 45 V 1 A 100MHz 2 W Surface Mount PG-SOT223-4-10

Technical documentation and resources