IXTX20N150

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IXYS

MOSFET N-CH 1500V 20A PLUS247-3

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IXYS

MOSFET N-CH 1500V 20A PLUS247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXTX20N150

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	1500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	215 nC
Input Capacitance (Ciss) (Max) @ Vds	7800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	1250 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
IXYS IXTX20N150	4.5 V	7800 pF	TO-247-3 Variant	1250 W	MOSFET (Metal Oxide)	-55 °C	150 °C	20 A	N-Channel	1500 V	215 nC	30 V	Through Hole	PLUS247™-3	1 Ohm	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1500 V 20A (Tc) 1250W (Tc) Through Hole PLUS247™-3

Technical documentation and resources

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