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STD2N105K5 - MFG_DPAK(TO252-3)

STD2N105K5

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 1.05 KV, 1.5 A, 6 OHM, TO-252 (DPAK), SURFACE MOUNT

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STD2N105K5 - MFG_DPAK(TO252-3)

STD2N105K5

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 1.05 KV, 1.5 A, 6 OHM, TO-252 (DPAK), SURFACE MOUNT

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Technical Specifications

Parameters and characteristics for this part

SpecificationSTD2N105K5
Current - Continuous Drain (Id) @ 25°C1.5 A
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]10 nC
Input Capacitance (Ciss) (Max) @ Vds115 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)60 W
Rds On (Max) @ Id, Vgs8 Ohm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.86
10$ 1.55
100$ 1.23
500$ 1.04
1000$ 0.88
Digi-Reel® 1$ 1.86
10$ 1.55
100$ 1.23
500$ 1.04
1000$ 0.88
Tape & Reel (TR) 2500$ 0.84
5000$ 0.81
12500$ 0.78
NewarkEach (Supplied on Full Reel) 2500$ 1.32
5000$ 1.29

Description

General part information

STD2N105K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.